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| PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd Edition July 1996 Application For GSM CLASS2 890 to 915 MHz Features * Low power control current: 0.9 mA Typ * High speed switching: 1.5 sec Typ * Wide power control range: 100 dB Typ Pin Arrangement * RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0121 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 FB1 C2 FB2 C1 Z2 Pin VAPC VDD Pout C1 = 0.01 F (Ceramic chip capacitor) C2 = 330 F (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 (Microstrip line) Absolute Maximum Ratings (Tc = 25C) Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 6 8 20 -30 to +110 -40 to +110 Unit V A V mW C C 2 PF0121 Electrical Characteristics (Tc = 25C) Item Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Switching time Stability Symbol I DS T 2nd H.D. 3rd H.D. Min -- 30 -- -- Typ -- 35 -50 -55 2 23 12 -60 1.5 Max 500 -- -40 -45 3 -- -- -40 2 Unit A % dBc dBc -- W W dBm s Pin = 2 mW, VDD = 12.5 V, VAPC = 7 V, RL =Rg = 50 , Tc = 25C Pin = 2 mW, VDD = 10.3V, VAPC = 7 V, RL = Rg = 50 , Tc = 80C Pin = 2 mW, VDD = 12.5 V, VAPC = 0.5 V, RL = Rg = 50 , Tc = 25C Pin = 2 mW, VDD = 12.5 V, Pout = 13 W, RL = Rg = 50 , Tc = 25C Pin = 2 mW, VDD = 12.5 V, Pout 13 W (at APC controlled), Rg = 50 , Tc = 25C, Output VSWR = 20:1 All phases Test Condition VDD = 17 V, VAPC = 0 V Pin = 2 mW, VDD = 12.5 V, Pout = 13 W (at APC controlled), RL = Rg = 50 , Tc = 25C VSWR (in) -- Pout (1) Pout (2) -- t r, t f -- 17 9 -- -- No parasitic oscillation -- Test System Diagram S.G Power Meter L.P.F 3dB ATT VAPC VDD Spectrum Analyzer Test Fixture Directional Coupler Directional Coupler RF SW. Power Meter Phase Shifter Short 3 PF0121 Switching Time Test Diagram VDD=12.5 V S.G Pin P.G f=10 kHz D.U.T Pout 1SS106 Z=50 2p 2p 1SS106 2.2 k Power Meter 50% VAPC 95% 5% tr tf Duty=1/8 50% VAPC 100p Oscillo Scope Vout Vout 4 PF0121 Test Fixture Pattern Unit: mm 26.5 3.5 2.88 16 4.5 3 2.88 64 28 4 VAPC VDD 80 3.5 1.5 2.88 4 4 15 100 Grass Epoxy Double sided PCB (t = 1.6 mm, r = 4.8) C1=0.01F (Ceramic Chip Capacitor) C2=330F (Aluminum Electrolyte Capacitor) L1=L2 : BLO2RN1-R62 (Manufacturer : MURATA) or equivalent (Ferrite Bead Inductor) The coefficient of RF line loss in the P.C.B is showed bellow. 1/ (S21)2 = 1/ (0.9805)2 = 1.068 Mechanical Characteristics Item Torque for screw up the heatsink flange Warp size of the heatsink flange: S Conditions M3 Screw Bolts Spec 4 to 6 kg*cm S=0 +0.3/-0 mm S 16.5 4 2.88 5 PF0121 Note for Use * Unevenness and distortion at the surface of the heatsink attached module should be less than 0.05 mm. * It should not be existed any dust between module and heatsink. * MODULE should be separated from PCB less than 1.5 mm. Soldering temperature and soldering time should be less than 230C, 10 sec. (Soldering position spaced from the root point of the lead frame: 2 mm) * Recommendation of thermal joint compounds is TYPE G746. (Manufacturer: Shin-Etsu Chemical, Co., Ltd.) * To protect devices from electro-static damage, soldering iron, measuring-equipment and human body etc. should be grounded. * Torque for screw up the heatsink flange should be 4 to 6 kg * cm with M3 screw bolts. * Don't solder the flange directly. * It should make the lead frame as straight as possible. * The module should be screwed up before lead soldering. * It should not be given mechanical and thermal stress to lead and flange of the module. * When the external parts (Isolator, Duplexer, etc.) of the module are changed, the electrical characteristics should be evaluated enough. * Don't washing the module except lead pins. * To get good stability, ground impedance between the module GND flange and PCB GND pattern should be designed as low as possible. 6 PF0121 Characteristic Curves VAPC, T, VSWR (in) vs. VDD (1) 6 10 f=890 MHz, Pin=2 mW Pout=13 W, Tc=25C, Rg=Rl=50 5 Apc Voltage VAPC (V) 8 T 40 Efficiency T (%) Efficiency T (%) 50 V.S.W.R. (in) 4 6 VAPC 4 30 3 20 2 2 VSWRin 10 1 0 10 11 12 13 14 15 0 16 Supply Voltage VDD (V) VAPC, T, VSWR (in) vs. VDD (2) 6 10 f=915 MHz, Pin=2 mW Pout=13 W, Tc=25C, Rg=Rl=50 5 Apc Voltage VAPC (V) 8 T 6 30 40 50 V.S.W.R. (in) 4 3 4 VAPC 20 2 2 VSWRin 10 1 0 10 11 12 13 14 15 0 16 Supply Voltage VDD (V) 7 PF0121 T, Pout vs. VAPC (1) 50 35 f = 890 MHz VDD=12.5 V V =15.6 V Pin = 2 mW DD Tc = 25C 30 Rg = Rl = 50 10.8 V 25 15.6 V 12.5 V 20 10.8 V 20 T 10 10 Pout 0 0 2 4 Apc Voltage VAPC (V) T, Pout vs. VAPC (2) 50 f = 915 MHz Pin = 2 mW Tc = 25C Rg = Rl = 50 VDD=15.6 V VDD=15.6 V 12.5 V 10.8 V 30 T 20 12.5 V 20 10.8 V 15 10 10 Pout 0 0 2 4 Apc Voltage VAPC (V) 6 8 5 0 25 35 30 Output Power Pout (W) 6 8 5 0 15 40 Efficiency T (%) 30 40 Efficiency T (%) 8 Output Power Pout (W) PF0121 VAPC, T, VSWR (in) vs. Pin (1) 6 10 f=890 MHz, VDD=12.5 V, Pout=13 W, Tc=25C, Rg=Rl=50 5 Apc Voltage VAPC (V) 8 T 6 30 40 Efficiency T (%) Efficiency T (%) 50 V.S.W.R. (in) 4 3 4 VAPC 2 20 2 10 VSWRin 0 2 4 6 8 1 0 0 10 Input Power Pin (mW) VAPC, T, VSWR (in) vs. Pin (2) 6 10 f=915 MHz, VDD=12.5 V, Pout=13 W, Tc=25C, Rg=Rl=50 5 Apc Voltage VAPC (V) 8 T 40 50 V.S.W.R. (in) 4 6 30 3 4 VAPC 2 VSWRin 20 2 10 1 0 0 2 4 6 8 Input Power Pin (mW) 0 10 9 PF0121 VAPC, T, VSWR (in) vs. Frequency 6 10 Pin=2 mW, VDD=12.5 V, Pout=13 W, Tc=25C, Rg=Rl=50 5 Apc Voltage VAPC (V) 8 T 6 30 Efficiency T (%) 40 50 V.S.W.R. (in) 4 3 4 VAPC 2 VSWRin 895 900 905 910 20 2 10 1 0 890 0 915 Frequency f (MHz) 10 PF0121 Package Dimensions Unit: mm 12.7 0.5 11.0 0.3 60.5 0.5 57.5 0.5 R1.6 0.5 0.6 5.0 + 0.3 - 2.3 13.0 1 9.2 1 8.0 1 Hitachi Code JEDEC EIAJ Weight (reference value) RF-B2 -- -- 16 g 0.25 22.0 1 3.3 49.8 0.5 51 1 2 3 4 6.35 0.5 11 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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